Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
13.2 nC @ 15 V
Height
0.58mm
Series
DMN3025LFDF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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₪ 0.364
Each (In a Pack of 50) (ex VAT)
₪ 0.426
Each (In a Pack of 50) (inc VAT)
50
₪ 0.364
Each (In a Pack of 50) (ex VAT)
₪ 0.426
Each (In a Pack of 50) (inc VAT)
50
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
13.2 nC @ 15 V
Height
0.58mm
Series
DMN3025LFDF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details