Technical documents
Specifications
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.5 x 15.8mm
Product details
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
Stock information temporarily unavailable.
Please check again later.
₪ 270.75
₪ 5.415 Each (In a Tube of 50) (ex VAT)
₪ 316.78
₪ 6.336 Each (In a Tube of 50) (inc. VAT)
50
₪ 270.75
₪ 5.415 Each (In a Tube of 50) (ex VAT)
₪ 316.78
₪ 6.336 Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | ₪ 5.415 | ₪ 270.75 |
250 - 450 | ₪ 3.705 | ₪ 185.25 |
500 - 1200 | ₪ 3.495 | ₪ 174.75 |
1250 - 2450 | ₪ 3.435 | ₪ 171.75 |
2500+ | ₪ 3.405 | ₪ 170.25 |
Technical documents
Specifications
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.5 x 15.8mm
Product details