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STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80

RS Stock No.: 760-9768Brand: STMicroelectronicsManufacturers Part No.: STW11NM80
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

43.6 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 58.08

₪ 58.08 Each (ex VAT)

₪ 67.95

₪ 67.95 Each (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80
Select packaging type

₪ 58.08

₪ 58.08 Each (ex VAT)

₪ 67.95

₪ 67.95 Each (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 STW11NM80
Stock information temporarily unavailable.
Select packaging type

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quantityUnit price
1 - 9₪ 58.08
10 - 49₪ 53.32
50 - 149₪ 49.59
150 - 499₪ 45.48
500+₪ 40.11

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

43.6 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more