Technical documents
Specifications
Brand
onsemiMaximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
186 W
Configuration
Dual
Package Type
Q0BOOST
Mounting Type
Surface Mount
Channel Type
N
Pin Count
22
Transistor Configuration
Dual
Dimensions
66.2 x 32.8 x 11.9mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Width
32.8mm
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P.O.A.
24
P.O.A.
24
Technical documents
Specifications
Brand
onsemiMaximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
186 W
Configuration
Dual
Package Type
Q0BOOST
Mounting Type
Surface Mount
Channel Type
N
Pin Count
22
Transistor Configuration
Dual
Dimensions
66.2 x 32.8 x 11.9mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Width
32.8mm