Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 2.755
Each (Supplied on a Reel) (ex VAT)
₪ 3.223
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
10
₪ 2.755
Each (Supplied on a Reel) (ex VAT)
₪ 3.223
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
10
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
10 - 90 | ₪ 2.755 | ₪ 27.55 |
100 - 240 | ₪ 1.203 | ₪ 12.03 |
250 - 490 | ₪ 1.175 | ₪ 11.75 |
500 - 990 | ₪ 1.147 | ₪ 11.47 |
1000+ | ₪ 1.133 | ₪ 11.33 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.