Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 40mA
Maximum Drain Source Voltage
20 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 1.04mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 2.265
Each (In a Pack of 50) (ex VAT)
₪ 2.65
Each (In a Pack of 50) (inc VAT)
50
₪ 2.265
Each (In a Pack of 50) (ex VAT)
₪ 2.65
Each (In a Pack of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | ₪ 2.265 | ₪ 113.27 |
250 - 450 | ₪ 1.049 | ₪ 52.44 |
500 - 2450 | ₪ 1.035 | ₪ 51.74 |
2500 - 4950 | ₪ 0.825 | ₪ 41.25 |
5000+ | ₪ 0.657 | ₪ 32.86 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 40mA
Maximum Drain Source Voltage
20 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 1.04mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.