IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 168-4412Brand: IXYSManufacturers Part No.: IXGH30N120B3D1
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Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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₪ 2,050.65

₪ 68.355 Each (In a Tube of 30) (ex VAT)

₪ 2,399.26

₪ 79.975 Each (In a Tube of 30) (inc. VAT)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

30

Available in multiples of 30
30₪ 2,050.65
60₪ 4,101.30
90₪ 6,151.95
120₪ 8,202.60
150₪ 10,253.25
180₪ 12,303.90
210₪ 14,354.55
240₪ 16,405.20
270₪ 18,455.85
300₪ 20,506.50
330₪ 22,557.15
360₪ 24,607.80
390₪ 26,658.45
420₪ 28,709.10
450₪ 30,759.75

₪ 2,050.65

₪ 68.355 Each (In a Tube of 30) (ex VAT)

₪ 2,399.26

₪ 79.975 Each (In a Tube of 30) (inc. VAT)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

30

Available in multiples of 30
30₪ 2,050.65
60₪ 4,101.30
90₪ 6,151.95
120₪ 8,202.60
150₪ 10,253.25
180₪ 12,303.90
210₪ 14,354.55
240₪ 16,405.20
270₪ 18,455.85
300₪ 20,506.50
330₪ 22,557.15
360₪ 24,607.80
390₪ 26,658.45
420₪ 28,709.10
450₪ 30,759.75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more