Infineon IRG4IBC10UDPBF IGBT, 6.8 A 600 V, 3-Pin TO-220AB, Through Hole

RS Stock No.: 864-0912PBrand: InfineonManufacturers Part No.: IRG4IBC10UDPBF
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

6.8 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

25 W

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

8 → 30kHz

Transistor Configuration

Single

Dimensions

10.75 x 4.83 x 16.13mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Mexico

Product details

Co-Pack IGBT up to 20A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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₪ 9.453

Each (Supplied in a Tube) (ex VAT)

₪ 11.06

Each (Supplied in a Tube) (inc. VAT)

Infineon IRG4IBC10UDPBF IGBT, 6.8 A 600 V, 3-Pin TO-220AB, Through Hole
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5₪ 47.27
10₪ 94.53
15₪ 141.80
20₪ 189.06
25₪ 236.33
30₪ 283.60
35₪ 330.86
40₪ 378.13
45₪ 425.39
50₪ 472.66
55₪ 519.93
60₪ 567.19
65₪ 614.46
70₪ 661.72
75₪ 708.99

₪ 9.453

Each (Supplied in a Tube) (ex VAT)

₪ 11.06

Each (Supplied in a Tube) (inc. VAT)

Infineon IRG4IBC10UDPBF IGBT, 6.8 A 600 V, 3-Pin TO-220AB, Through Hole
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5₪ 47.27
10₪ 94.53
15₪ 141.80
20₪ 189.06
25₪ 236.33
30₪ 283.60
35₪ 330.86
40₪ 378.13
45₪ 425.39
50₪ 472.66
55₪ 519.93
60₪ 567.19
65₪ 614.46
70₪ 661.72
75₪ 708.99

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

6.8 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

25 W

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

8 → 30kHz

Transistor Configuration

Single

Dimensions

10.75 x 4.83 x 16.13mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Mexico

Product details

Co-Pack IGBT up to 20A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more