Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
185 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
60kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
1.32mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
3700pF
Product details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 24.794
Each (In a Tube of 30) (ex VAT)
₪ 29.009
Each (In a Tube of 30) (inc VAT)
30
₪ 24.794
Each (In a Tube of 30) (ex VAT)
₪ 29.009
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | ₪ 24.794 | ₪ 743.81 |
150+ | ₪ 21.829 | ₪ 654.87 |
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
185 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
60kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
1.32mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
3700pF
Product details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.