Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
7
Package Type
EASY2B
Channel Type
N
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P.O.A.
Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B
10
P.O.A.
Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B
Stock information temporarily unavailable.
10
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
7
Package Type
EASY2B
Channel Type
N