Technical documents
Specifications
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Product details
Dual Matched Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
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₪ 0.741
Each (Supplied as a Tape) (ex VAT)
₪ 0.867
Each (Supplied as a Tape) (inc. VAT)
Standard
50
₪ 0.741
Each (Supplied as a Tape) (ex VAT)
₪ 0.867
Each (Supplied as a Tape) (inc. VAT)
Standard
50
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
50 - 1200 | ₪ 0.741 | ₪ 37.06 |
1250 - 4950 | ₪ 0.503 | ₪ 25.17 |
5000 - 24950 | ₪ 0.489 | ₪ 24.47 |
25000+ | ₪ 0.489 | ₪ 24.47 |
Technical documents
Specifications
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Product details