Technical documents
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
400 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.25 kW
Package Type
M233
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
92 x 45 x 30mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 973.175
Each (In a Box of 20) (ex VAT)
₪ 1,138.615
Each (In a Box of 20) (inc VAT)
20
₪ 973.175
Each (In a Box of 20) (ex VAT)
₪ 1,138.615
Each (In a Box of 20) (inc VAT)
20
Technical documents
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
400 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.25 kW
Package Type
M233
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
92 x 45 x 30mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.