Technical documents
Specifications
Gender
Female
Impedance
50Ω
Body Plating
Gold
Body Orientation
Straight
Contact Material
Beryllium Copper
Funnel Diameter
180mm
Operating Frequency
0 to 6GHz
Contact Plating
Gold
Termination Method
Solder
Model
Whad HE 6000Mounting Type
Through Hole
Product details
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Stock information temporarily unavailable.
Please check again later.
₪ 23.563
Each (In a Bag of 100) (ex VAT)
₪ 27.569
Each (In a Bag of 100) (inc VAT)
100
₪ 23.563
Each (In a Bag of 100) (ex VAT)
₪ 27.569
Each (In a Bag of 100) (inc VAT)
100
Technical documents
Specifications
Gender
Female
Impedance
50Ω
Body Plating
Gold
Body Orientation
Straight
Contact Material
Beryllium Copper
Funnel Diameter
180mm
Operating Frequency
0 to 6GHz
Contact Plating
Gold
Termination Method
Solder
Model
Whad HE 6000Mounting Type
Through Hole
Product details
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.