Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 78.30
₪ 7.83 Each (In a Pack of 10) (ex VAT)
₪ 91.61
₪ 9.161 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 78.30
₪ 7.83 Each (In a Pack of 10) (ex VAT)
₪ 91.61
₪ 9.161 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 240 | ₪ 7.83 | ₪ 78.30 |
| 250 - 490 | ₪ 6.12 | ₪ 61.20 |
| 500 - 990 | ₪ 4.575 | ₪ 45.75 |
| 1000 - 1990 | ₪ 3.705 | ₪ 37.05 |
| 2000+ | ₪ 3.375 | ₪ 33.75 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


