Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF

RS Stock No.: 708-5134PBrand: VishayManufacturers Part No.: IRF510PBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₪ 657.00

₪ 6.57 Each (Supplied in a Tube) (ex VAT)

₪ 768.69

₪ 7.687 Each (Supplied in a Tube) (inc. VAT)

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF
Select packaging type

₪ 657.00

₪ 6.57 Each (Supplied in a Tube) (ex VAT)

₪ 768.69

₪ 7.687 Each (Supplied in a Tube) (inc. VAT)

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Tube
100 - 240₪ 6.57₪ 65.70
250 - 990₪ 6.345₪ 63.45
1000+₪ 4.275₪ 42.75

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more