Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

RS Stock No.: 178-3691Brand: Vishay SiliconixManufacturers Part No.: SIRC06DP-T1-GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.7V

Height

1.07mm

Country of Origin

China

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₪ 16.193

Each (On a Reel of 3000) (ex VAT)

₪ 18.946

Each (On a Reel of 3000) (inc VAT)

Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

3000

Available in multiples of 3000
3000₪ 48,580.42
6000₪ 97,160.83
9000₪ 145,741.25
12000₪ 194,321.66
15000₪ 242,902.08
18000₪ 291,482.50
21000₪ 340,062.91
24000₪ 388,643.33
27000₪ 437,223.74
30000₪ 485,804.16
33000₪ 534,384.58
36000₪ 582,964.99
39000₪ 631,545.41
42000₪ 680,125.82
45000₪ 728,706.24

₪ 16.193

Each (On a Reel of 3000) (ex VAT)

₪ 18.946

Each (On a Reel of 3000) (inc VAT)

Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 48,580.42
6000₪ 97,160.83
9000₪ 145,741.25
12000₪ 194,321.66
15000₪ 242,902.08
18000₪ 291,482.50
21000₪ 340,062.91
24000₪ 388,643.33
27000₪ 437,223.74
30000₪ 485,804.16
33000₪ 534,384.58
36000₪ 582,964.99
39000₪ 631,545.41
42000₪ 680,125.82
45000₪ 728,706.24

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.7V

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more