Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
₪ 100.20
₪ 20.04 Each (In a Pack of 5) (ex VAT)
₪ 117.23
₪ 23.447 Each (In a Pack of 5) (inc. VAT)
5
₪ 100.20
₪ 20.04 Each (In a Pack of 5) (ex VAT)
₪ 117.23
₪ 23.447 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 20.04 | ₪ 100.20 |
25 - 45 | ₪ 15.39 | ₪ 76.95 |
50 - 120 | ₪ 14.055 | ₪ 70.28 |
125 - 245 | ₪ 12.69 | ₪ 63.45 |
250+ | ₪ 12.225 | ₪ 61.12 |
Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Country of Origin
China
Product details