Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
25 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
₪ 56.62
₪ 2.265 Each (In a Pack of 25) (ex VAT)
₪ 66.25
₪ 2.65 Each (In a Pack of 25) (inc. VAT)
25
₪ 56.62
₪ 2.265 Each (In a Pack of 25) (ex VAT)
₪ 66.25
₪ 2.65 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 225 | ₪ 2.265 | ₪ 56.62 |
| 250 - 475 | ₪ 1.17 | ₪ 29.25 |
| 500 - 975 | ₪ 1.11 | ₪ 27.75 |
| 1000 - 1975 | ₪ 0.93 | ₪ 23.25 |
| 2000+ | ₪ 0.93 | ₪ 23.25 |
Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
25 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details


