Technical documents
Specifications
Brand
Texas InstrumentsProduct Type
MOSFET
Output Current
1.5A
Pin Count
8
Fall Time
60ns
Package Type
PDIP
Number of Outputs
2
Driver Type
MOSFET
Rise Time
80ns
Minimum Supply Voltage
40V
Number of Drivers
2
Maximum Supply Voltage
40V
Minimum Operating Temperature
0°C
Maximum Operating Temperature
70°C
Length
9.81mm
Standards/Approvals
No
Width
6.35 mm
Series
UC3709
Height
4.57mm
Mount Type
Through Hole
Automotive Standard
No
Country of Origin
Malaysia
Product details
MOSFET & IGBT Drivers, up to 2.5A, Texas Instruments
A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.
MOSFET & IGBT Drivers, Texas Instruments
Stock information temporarily unavailable.
₪ 3,195.75
₪ 63.915 Each (In a Tube of 50) (ex VAT)
₪ 3,739.03
₪ 74.781 Each (In a Tube of 50) (inc. VAT)
50
₪ 3,195.75
₪ 63.915 Each (In a Tube of 50) (ex VAT)
₪ 3,739.03
₪ 74.781 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | ₪ 63.915 | ₪ 3,195.75 |
| 250 - 450 | ₪ 55.125 | ₪ 2,756.25 |
| 500+ | ₪ 51.345 | ₪ 2,567.25 |
Technical documents
Specifications
Brand
Texas InstrumentsProduct Type
MOSFET
Output Current
1.5A
Pin Count
8
Fall Time
60ns
Package Type
PDIP
Number of Outputs
2
Driver Type
MOSFET
Rise Time
80ns
Minimum Supply Voltage
40V
Number of Drivers
2
Maximum Supply Voltage
40V
Minimum Operating Temperature
0°C
Maximum Operating Temperature
70°C
Length
9.81mm
Standards/Approvals
No
Width
6.35 mm
Series
UC3709
Height
4.57mm
Mount Type
Through Hole
Automotive Standard
No
Country of Origin
Malaysia
Product details
MOSFET & IGBT Drivers, up to 2.5A, Texas Instruments
A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.


