STMicroelectronics, Type N-Channel IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
120A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-40°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₪ 1,583.10
₪ 52.77 Each (In a Tube of 30) (ex VAT)
₪ 1,852.23
₪ 61.741 Each (In a Tube of 30) (inc. VAT)
30
₪ 1,583.10
₪ 52.77 Each (In a Tube of 30) (ex VAT)
₪ 1,852.23
₪ 61.741 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | ₪ 52.77 | ₪ 1,583.10 |
| 60 - 90 | ₪ 48.99 | ₪ 1,469.70 |
| 120 - 270 | ₪ 46.155 | ₪ 1,384.65 |
| 300 - 570 | ₪ 44.82 | ₪ 1,344.60 |
| 600+ | ₪ 41.385 | ₪ 1,241.55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
120A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-40°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products