STMicroelectronics, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
Trench Gate Field Stop
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₪ 647.10
₪ 21.57 Each (In a Tube of 30) (ex VAT)
₪ 757.11
₪ 25.237 Each (In a Tube of 30) (inc. VAT)
30
₪ 647.10
₪ 21.57 Each (In a Tube of 30) (ex VAT)
₪ 757.11
₪ 25.237 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 120 | ₪ 21.57 | ₪ 647.10 |
| 150 - 270 | ₪ 19.02 | ₪ 570.60 |
| 300 - 720 | ₪ 18.345 | ₪ 550.35 |
| 750 - 1470 | ₪ 17.70 | ₪ 531.00 |
| 1500+ | ₪ 17.04 | ₪ 511.20 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
Trench Gate Field Stop
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products