STMicroelectronics STGD19N40LZ IGBT, 25 A 425 V, 3-Pin DPAK (TO-252), Surface Mount
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
425 V
Maximum Gate Emitter Voltage
±16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 16.921
Each (Supplied as a Tape) (ex VAT)
₪ 19.798
Each (Supplied as a Tape) (inc VAT)
5
₪ 16.921
Each (Supplied as a Tape) (ex VAT)
₪ 19.798
Each (Supplied as a Tape) (inc VAT)
5
Buy in bulk
| quantity | Unit price | Per Tape |
|---|---|---|
| 5 - 45 | ₪ 16.921 | ₪ 84.60 |
| 50 - 95 | ₪ 13.676 | ₪ 68.38 |
| 100+ | ₪ 11.159 | ₪ 55.80 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
425 V
Maximum Gate Emitter Voltage
±16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products