Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
₪ 227.25
₪ 4.545 Each (In a Tube of 50) (ex VAT)
₪ 265.88
₪ 5.318 Each (In a Tube of 50) (inc. VAT)
50
₪ 227.25
₪ 4.545 Each (In a Tube of 50) (ex VAT)
₪ 265.88
₪ 5.318 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


