Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
450 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
₪ 366.75
₪ 7.335 Each (In a Tube of 50) (ex VAT)
₪ 429.10
₪ 8.582 Each (In a Tube of 50) (inc. VAT)
50
₪ 366.75
₪ 7.335 Each (In a Tube of 50) (ex VAT)
₪ 429.10
₪ 8.582 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | ₪ 7.335 | ₪ 366.75 |
| 100 - 150 | ₪ 5.61 | ₪ 280.50 |
| 200 - 450 | ₪ 5.355 | ₪ 267.75 |
| 500 - 950 | ₪ 5.115 | ₪ 255.75 |
| 1000+ | ₪ 4.11 | ₪ 205.50 |
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
450 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


