Semikron Danfoss SKM400GB12E4, Type N-Channel IGBT Module, 616 A 1200 V, 7-Pin SEMITRANS, Screw

Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current Ic
616A
Product Type
IGBT Module
Maximum Collector Emitter Voltage Vceo
1200V
Number of Transistors
2
Package Type
SEMITRANS
Mount Type
Screw
Channel Type
Type N
Pin Count
7
Switching Speed
12kHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
175°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Maximum Operating Temperature
-40°C
Height
30.5mm
Length
106.4mm
Standards/Approvals
No
Series
SKM400GB12E4
Automotive Standard
No
Country of Origin
Slovakia
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
₪ 2,025.52
₪ 2,025.52 Each (ex VAT)
₪ 2,369.86
₪ 2,369.86 Each (inc. VAT)
1
₪ 2,025.52
₪ 2,025.52 Each (ex VAT)
₪ 2,369.86
₪ 2,369.86 Each (inc. VAT)
Stock information temporarily unavailable.
1
| quantity | Unit price |
|---|---|
| 1 - 1 | ₪ 2,025.52 |
| 2 - 4 | ₪ 1,864.88 |
| 5+ | ₪ 1,808.52 |
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current Ic
616A
Product Type
IGBT Module
Maximum Collector Emitter Voltage Vceo
1200V
Number of Transistors
2
Package Type
SEMITRANS
Mount Type
Screw
Channel Type
Type N
Pin Count
7
Switching Speed
12kHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
175°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Maximum Operating Temperature
-40°C
Height
30.5mm
Length
106.4mm
Standards/Approvals
No
Series
SKM400GB12E4
Automotive Standard
No
Country of Origin
Slovakia
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

