Semikron Danfoss SKM150GAL12T4, Type N-Channel Fast IGBT4 Module, 232 A 1200 V, 5-Pin SEMITRANS2, Surface
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current Ic
232A
Product Type
Fast IGBT4 Module
Maximum Collector Emitter Voltage Vceo
1200V
Package Type
SEMITRANS2
Mount Type
Surface
Channel Type
Type N
Pin Count
5
Switching Speed
180ns
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.4V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Length
94mm
Height
30.1mm
Standards/Approvals
IEC 60747-1
Series
GAL
Automotive Standard
No
Product details
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₪ 1,003.52
₪ 1,003.52 Each (ex VAT)
₪ 1,174.12
₪ 1,174.12 Each (inc. VAT)
1
₪ 1,003.52
₪ 1,003.52 Each (ex VAT)
₪ 1,174.12
₪ 1,174.12 Each (inc. VAT)
Stock information temporarily unavailable.
1
| quantity | Unit price |
|---|---|
| 1 - 9 | ₪ 1,003.52 |
| 10 - 19 | ₪ 758.42 |
| 20+ | ₪ 731.72 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current Ic
232A
Product Type
Fast IGBT4 Module
Maximum Collector Emitter Voltage Vceo
1200V
Package Type
SEMITRANS2
Mount Type
Surface
Channel Type
Type N
Pin Count
5
Switching Speed
180ns
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.4V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Length
94mm
Height
30.1mm
Standards/Approvals
IEC 60747-1
Series
GAL
Automotive Standard
No
Product details
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products