ROHM RTR030P02 P-Channel MOSFET, 3 A, 20 V, 3-Pin TSMT RQ5C030TPTL

RS Stock No.: 124-6833Brand: ROHMManufacturers Part No.: RQ5C030TPTL
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Technical documents

Specifications

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Series

RTR030P02

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Width

1.6mm

Length

2.9mm

Typical Gate Charge @ Vgs

9.3 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

Product details

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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₪ 73.20

₪ 3.66 Each (In a Pack of 20) (ex VAT)

₪ 85.64

₪ 4.282 Each (In a Pack of 20) (inc. VAT)

ROHM RTR030P02 P-Channel MOSFET, 3 A, 20 V, 3-Pin TSMT RQ5C030TPTL

₪ 73.20

₪ 3.66 Each (In a Pack of 20) (ex VAT)

₪ 85.64

₪ 4.282 Each (In a Pack of 20) (inc. VAT)

ROHM RTR030P02 P-Channel MOSFET, 3 A, 20 V, 3-Pin TSMT RQ5C030TPTL

Stock information temporarily unavailable.

Stock information temporarily unavailable.

quantityUnit pricePer Pack
20 - 80₪ 3.66₪ 73.20
100 - 180₪ 2.235₪ 44.70
200 - 480₪ 2.055₪ 41.10
500+₪ 2.025₪ 40.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical documents

Specifications

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Series

RTR030P02

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Width

1.6mm

Length

2.9mm

Typical Gate Charge @ Vgs

9.3 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

Product details

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more