Technical documents
Specifications
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
11 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
500 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.3 x 0.9 x 0.45mm
Country of Origin
Japan
Product details
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.
Bipolar Transistors, ROHM Semiconductor
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₪ 1.328
Each (In a Pack of 50) (ex VAT)
₪ 1.554
Each (In a Pack of 50) (inc VAT)
50
₪ 1.328
Each (In a Pack of 50) (ex VAT)
₪ 1.554
Each (In a Pack of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | ₪ 1.328 | ₪ 66.42 |
250 - 450 | ₪ 1.273 | ₪ 63.63 |
500 - 2450 | ₪ 1.245 | ₪ 62.23 |
2500 - 4950 | ₪ 1.217 | ₪ 60.83 |
5000+ | ₪ 1.203 | ₪ 60.13 |
Technical documents
Specifications
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
11 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
500 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.3 x 0.9 x 0.45mm
Country of Origin
Japan
Product details
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.