Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount
Technical documents
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
150 (Pulse) A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Maximum Power Dissipation
1.6 W
Package Type
TSOJ
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Transistor Configuration
Single
Dimensions
3.1 x 2.5 x 1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 11.355
Each (In a Pack of 4) (ex VAT)
₪ 13.285
Each (In a Pack of 4) (inc VAT)
4
₪ 11.355
Each (In a Pack of 4) (ex VAT)
₪ 13.285
Each (In a Pack of 4) (inc VAT)
4
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 36 | ₪ 11.355 | ₪ 45.42 |
| 40 - 76 | ₪ 9.495 | ₪ 37.98 |
| 80 - 196 | ₪ 8.782 | ₪ 35.13 |
| 200 - 396 | ₪ 8.39 | ₪ 33.56 |
| 400+ | ₪ 8.32 | ₪ 33.28 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
150 (Pulse) A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Maximum Power Dissipation
1.6 W
Package Type
TSOJ
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Transistor Configuration
Single
Dimensions
3.1 x 2.5 x 1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products