Technical documents
Specifications
Brand
Renesas ElectronicsTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-32
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximum Collector Cut-off Current
0.2mA
Minimum Operating Temperature
-65 °C
Height
10.8mm
Dimensions
7.8 x 2.7 x 10.8mm
Maximum Operating Temperature
+150 °C
Length
7.8mm
Width
2.7mm
Product details
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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Each (ex VAT)
₪ 7.64
Each (inc. VAT)
Standard
1
₪ 6.53
Each (ex VAT)
₪ 7.64
Each (inc. VAT)
Standard
1
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Technical documents
Specifications
Brand
Renesas ElectronicsTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-32
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximum Collector Cut-off Current
0.2mA
Minimum Operating Temperature
-65 °C
Height
10.8mm
Dimensions
7.8 x 2.7 x 10.8mm
Maximum Operating Temperature
+150 °C
Length
7.8mm
Width
2.7mm
Product details
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.