Technical documents
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
15V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Drain Source Resistance Rds
30Ω
Drain Source Current Ids
20 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
1.04mm
Length
2.9mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
₪ 307.50
₪ 1.23 Each (Supplied on a Reel) (ex VAT)
₪ 359.78
₪ 1.439 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
₪ 307.50
₪ 1.23 Each (Supplied on a Reel) (ex VAT)
₪ 359.78
₪ 1.439 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
250
Technical documents
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
15V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Drain Source Resistance Rds
30Ω
Drain Source Current Ids
20 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
1.04mm
Length
2.9mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


