Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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₪ 32.359
Each (In a Tube of 25) (ex VAT)
₪ 37.86
Each (In a Tube of 25) (inc VAT)
25
₪ 32.359
Each (In a Tube of 25) (ex VAT)
₪ 37.86
Each (In a Tube of 25) (inc VAT)
25
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
25 - 100 | ₪ 32.359 | ₪ 808.97 |
125 - 225 | ₪ 28.569 | ₪ 714.23 |
250+ | ₪ 27.562 | ₪ 689.06 |
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.