onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface

RS Stock No.: 807-8758PBrand: onsemiManufacturers Part No.: ISL9V3040D3ST
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Technical documents

Specifications

Brand

onsemi

Product Type

Ignition IGBT

Maximum Continuous Collector Current Ic

21A

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±10 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

EcoSPARK

Energy Rating

300mJ

Automotive Standard

AEC-Q101

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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View all in IGBTs

Stock information temporarily unavailable.

₪ 265.12

₪ 10.605 Each (Supplied on a Reel) (ex VAT)

₪ 310.19

₪ 12.408 Each (Supplied on a Reel) (inc. VAT)

onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 5
25₪ 265.12
30₪ 318.15
35₪ 371.18
40₪ 424.20
45₪ 477.22
50₪ 477.00
55₪ 524.70
60₪ 572.40
65₪ 620.10
70₪ 667.80
75₪ 715.50
80₪ 763.20
85₪ 810.90
90₪ 858.60
95₪ 906.30

₪ 265.12

₪ 10.605 Each (Supplied on a Reel) (ex VAT)

₪ 310.19

₪ 12.408 Each (Supplied on a Reel) (inc. VAT)

onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 5
25₪ 265.12
30₪ 318.15
35₪ 371.18
40₪ 424.20
45₪ 477.22
50₪ 477.00
55₪ 524.70
60₪ 572.40
65₪ 620.10
70₪ 667.80
75₪ 715.50
80₪ 763.20
85₪ 810.90
90₪ 858.60
95₪ 906.30

quantityUnit pricePer Reel
25 - 45₪ 10.605₪ 53.02
50 - 245₪ 9.54₪ 47.70
250 - 495₪ 8.40₪ 42.00
500+₪ 7.59₪ 37.95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

onsemi

Product Type

Ignition IGBT

Maximum Continuous Collector Current Ic

21A

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±10 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

EcoSPARK

Energy Rating

300mJ

Automotive Standard

AEC-Q101

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more