onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole
Technical documents
Specifications
Brand
onsemiMaximum Continuous Collector Current
64 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-264
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
20 x 5 x 26mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 1,338.75
₪ 53.55 Each (In a Tube of 25) (ex VAT)
₪ 1,566.34
₪ 62.654 Each (In a Tube of 25) (inc. VAT)
25
₪ 1,338.75
₪ 53.55 Each (In a Tube of 25) (ex VAT)
₪ 1,566.34
₪ 62.654 Each (In a Tube of 25) (inc. VAT)
Stock information temporarily unavailable.
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 100 | ₪ 53.55 | ₪ 1,338.75 |
| 125 - 225 | ₪ 46.11 | ₪ 1,152.75 |
| 250+ | ₪ 41.31 | ₪ 1,032.75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
onsemiMaximum Continuous Collector Current
64 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-264
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
20 x 5 x 26mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products