onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 181-1864Brand: onsemiManufacturers Part No.: FGH75T65SQDNL4
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Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

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₪ 43.266

Each (In a Tube of 450) (ex VAT)

₪ 50.621

Each (In a Tube of 450) (inc VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

450

Available in multiples of 450
450₪ 19,469.92
900₪ 35,277.44
1350₪ 52,916.16
1800₪ 70,554.87
2250₪ 88,193.59
2700₪ 105,832.31
3150₪ 123,471.03
3600₪ 141,109.75
4050₪ 158,748.47
4500₪ 176,387.18
4950₪ 194,025.90
5400₪ 211,664.62
5850₪ 229,303.34
6300₪ 246,942.06
6750₪ 264,580.78

₪ 43.266

Each (In a Tube of 450) (ex VAT)

₪ 50.621

Each (In a Tube of 450) (inc VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

450

Available in multiples of 450
450₪ 19,469.92
900₪ 35,277.44
1350₪ 52,916.16
1800₪ 70,554.87
2250₪ 88,193.59
2700₪ 105,832.31
3150₪ 123,471.03
3600₪ 141,109.75
4050₪ 158,748.47
4500₪ 176,387.18
4950₪ 194,025.90
5400₪ 211,664.62
5850₪ 229,303.34
6300₪ 246,942.06
6750₪ 264,580.78

Buy in bulk

quantityUnit pricePer Tube
450 - 450₪ 43.266₪ 19,469.92
900+₪ 39.197₪ 17,638.72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more