Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.3mm
Country of Origin
China
₪ 8,904.00
₪ 11.13 Each (In a Tube of 800) (ex VAT)
₪ 10,417.68
₪ 13.022 Each (In a Tube of 800) (inc. VAT)
800
₪ 8,904.00
₪ 11.13 Each (In a Tube of 800) (ex VAT)
₪ 10,417.68
₪ 13.022 Each (In a Tube of 800) (inc. VAT)
800
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
800 - 800 | ₪ 11.13 | ₪ 8,904.00 |
1600+ | ₪ 9.39 | ₪ 7,512.00 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
144 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.3mm
Country of Origin
China