P-Channel MOSFET, 3 A, 12 V, 3-Pin CPH3 onsemi CPH3348-TL-W
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
CPH3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Width
1.6mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Height
0.9mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₪ 73.50
₪ 2.94 Each (In a Pack of 25) (ex VAT)
₪ 86.00
₪ 3.44 Each (In a Pack of 25) (inc. VAT)
Standard
25
₪ 73.50
₪ 2.94 Each (In a Pack of 25) (ex VAT)
₪ 86.00
₪ 3.44 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 100 | ₪ 2.94 | ₪ 73.50 |
| 125 - 225 | ₪ 1.50 | ₪ 37.50 |
| 250 - 475 | ₪ 1.485 | ₪ 37.12 |
| 500 - 975 | ₪ 1.44 | ₪ 36.00 |
| 1000+ | ₪ 1.155 | ₪ 28.88 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
CPH3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Width
1.6mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Height
0.9mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products