Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.33 x 5.2 x 4.19mm
Product details
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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₪ 2.112
Each (Supplied as a Tape) (ex VAT)
₪ 2.471
Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
25
₪ 2.112
Each (Supplied as a Tape) (ex VAT)
₪ 2.471
Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
25
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
25 - 75 | ₪ 2.112 | ₪ 52.79 |
100+ | ₪ 0.559 | ₪ 13.98 |
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.33 x 5.2 x 4.19mm
Product details
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.