Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Width
1.5mm
Country of Origin
China
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 0.909
Each (Supplied on a Reel) (ex VAT)
₪ 1.064
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
₪ 0.909
Each (Supplied on a Reel) (ex VAT)
₪ 1.064
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Width
1.5mm
Country of Origin
China
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.