Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.05 to 0.13mA
Maximum Drain Source Voltage
40 V
Maximum Drain Gate Voltage
-40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
0.7pF
Source Gate On-Capacitance
0.3pF
Dimensions
1.07 x 0.67 x 0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Length
1.07mm
Height
0.41mm
Width
0.67mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 2.559
Each (In a Pack of 50) (ex VAT)
₪ 2.994
Each (In a Pack of 50) (inc VAT)
50
₪ 2.559
Each (In a Pack of 50) (ex VAT)
₪ 2.994
Each (In a Pack of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | ₪ 2.559 | ₪ 127.95 |
250 - 950 | ₪ 1.245 | ₪ 62.23 |
1000 - 2450 | ₪ 0.951 | ₪ 47.55 |
2500+ | ₪ 0.755 | ₪ 37.76 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.05 to 0.13mA
Maximum Drain Source Voltage
40 V
Maximum Drain Gate Voltage
-40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
0.7pF
Source Gate On-Capacitance
0.3pF
Dimensions
1.07 x 0.67 x 0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Length
1.07mm
Height
0.41mm
Width
0.67mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.