P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT3G

RS Stock No.: 808-0060Brand: onsemiManufacturers Part No.: NTR1P02LT3G
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.25V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

3.1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.01mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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₪ 0.461

Each (Supplied as a Tape) (ex VAT)

₪ 0.539

Each (Supplied as a Tape) (inc VAT)

P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT3G
Select packaging type

₪ 0.461

Each (Supplied as a Tape) (ex VAT)

₪ 0.539

Each (Supplied as a Tape) (inc VAT)

P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT3G
Stock information temporarily unavailable.
Select packaging type

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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.25V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

3.1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.01mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor