onsemi MMBFJ201 N-Channel JFET, Idss 0.3 to 1.5mA, 3-Pin SOT-23

RS Stock No.: 761-3688Brand: onsemiManufacturers Part No.: MMBFJ201
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.3 to 1.5mA

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Configuration

Single

Transistor Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.92 x 1.3 x 0.93mm

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Stock information temporarily unavailable.

₪ 2.168

Each (In a Pack of 25) (ex VAT)

₪ 2.536

Each (In a Pack of 25) (inc VAT)

onsemi MMBFJ201 N-Channel JFET, Idss 0.3 to 1.5mA, 3-Pin SOT-23
Select packaging type

₪ 2.168

Each (In a Pack of 25) (ex VAT)

₪ 2.536

Each (In a Pack of 25) (inc VAT)

onsemi MMBFJ201 N-Channel JFET, Idss 0.3 to 1.5mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
25 - 225₪ 2.168₪ 54.19
250 - 725₪ 1.161₪ 29.02
750 - 1475₪ 1.119₪ 27.97
1500 - 2975₪ 0.965₪ 24.12
3000+₪ 0.769₪ 19.23

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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.3 to 1.5mA

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Configuration

Single

Transistor Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.92 x 1.3 x 0.93mm

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.