onsemi MMBF4393LG N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23

RS Stock No.: 864-7846PBrand: onsemiManufacturers Part No.: MMBF4393LT1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

5 to 30mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

100 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

14pF

Source Gate On-Capacitance

14pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Stock information temporarily unavailable.

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Stock information temporarily unavailable.

₪ 2.545

Each (Supplied on a Reel) (ex VAT)

₪ 2.978

Each (Supplied on a Reel) (inc VAT)

onsemi MMBF4393LG N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23
Select packaging type

₪ 2.545

Each (Supplied on a Reel) (ex VAT)

₪ 2.978

Each (Supplied on a Reel) (inc VAT)

onsemi MMBF4393LG N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
50 - 50₪ 2.545₪ 127.25
100 - 200₪ 1.426₪ 71.32
250 - 450₪ 1.398₪ 69.92
500 - 950₪ 1.356₪ 67.82
1000+₪ 1.147₪ 57.33

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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

5 to 30mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

100 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

14pF

Source Gate On-Capacitance

14pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.