N-Channel MOSFET, 9.5 A, 200 V, 3-Pin TO-220AB onsemi FQP10N20C

RS Stock No.: 671-4998Brand: ON SemiconductorManufacturers Part No.: FQP10N20C
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9.5 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.1mm

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

20 nC @ 10 V

Series

QFET

Minimum Operating Temperature

-55 °C

Height

9.4mm

Product details

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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₪ 3.188

Each (In a Pack of 5) (ex VAT)

₪ 3.73

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 9.5 A, 200 V, 3-Pin TO-220AB onsemi FQP10N20C
Select packaging type

₪ 3.188

Each (In a Pack of 5) (ex VAT)

₪ 3.73

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 9.5 A, 200 V, 3-Pin TO-220AB onsemi FQP10N20C
Stock information temporarily unavailable.
Select packaging type

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9.5 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.1mm

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

20 nC @ 10 V

Series

QFET

Minimum Operating Temperature

-55 °C

Height

9.4mm

Product details

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.