ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220
Technical documents
Specifications
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
5 A
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
120 W
Minimum DC Current Gain
8
Pin Count
3
Minimum Operating Temperature
-55 °C
Dimensions
10.67 x 4.83 x 16.51mm
Maximum Operating Temperature
+125 °C
Product details
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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₪ 75.60
₪ 7.56 Each (In a Pack of 10) (ex VAT)
₪ 88.45
₪ 8.845 Each (In a Pack of 10) (inc. VAT)
10
₪ 75.60
₪ 7.56 Each (In a Pack of 10) (ex VAT)
₪ 88.45
₪ 8.845 Each (In a Pack of 10) (inc. VAT)
10
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Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | ₪ 7.56 | ₪ 75.60 |
| 50 - 90 | ₪ 6.435 | ₪ 64.35 |
| 100 - 490 | ₪ 5.28 | ₪ 52.80 |
| 500 - 990 | ₪ 4.785 | ₪ 47.85 |
| 1000+ | ₪ 3.795 | ₪ 37.95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
5 A
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
120 W
Minimum DC Current Gain
8
Pin Count
3
Minimum Operating Temperature
-55 °C
Dimensions
10.67 x 4.83 x 16.51mm
Maximum Operating Temperature
+125 °C
Product details
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products