onsemi FGH75T65SQDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 181-1865Brand: ON SemiconductorManufacturers Part No.: FGH75T65SQDTL4
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Technical documents

Specifications

Brand

ON Semiconductor

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

4845pF

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Country of Origin

China

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₪ 32.792

Each (In a Tube of 450) (ex VAT)

₪ 38.367

Each (In a Tube of 450) (inc VAT)

onsemi FGH75T65SQDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

450

Available in multiples of 450
450₪ 14,756.62
900₪ 27,650.56
1350₪ 41,475.84
1800₪ 55,301.13
2250₪ 69,126.41
2700₪ 82,951.69
3150₪ 96,776.97
3600₪ 110,602.25
4050₪ 124,427.53
4500₪ 138,252.82
4950₪ 152,078.10
5400₪ 165,903.38
5850₪ 179,728.66
6300₪ 193,553.94
6750₪ 207,379.22

₪ 32.792

Each (In a Tube of 450) (ex VAT)

₪ 38.367

Each (In a Tube of 450) (inc VAT)

onsemi FGH75T65SQDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

450

Available in multiples of 450
450₪ 14,756.62
900₪ 27,650.56
1350₪ 41,475.84
1800₪ 55,301.13
2250₪ 69,126.41
2700₪ 82,951.69
3150₪ 96,776.97
3600₪ 110,602.25
4050₪ 124,427.53
4500₪ 138,252.82
4950₪ 152,078.10
5400₪ 165,903.38
5850₪ 179,728.66
6300₪ 193,553.94
6750₪ 207,379.22

Buy in bulk

quantityUnit pricePer Tube
450 - 450₪ 32.792₪ 14,756.62
900+₪ 30.723₪ 13,825.28

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

ON Semiconductor

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

4845pF

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more