Technical documents
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1250 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
136 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 12.656
Each (In a Tube of 30) (ex VAT)
₪ 14.807
Each (In a Tube of 30) (inc VAT)
30
₪ 12.656
Each (In a Tube of 30) (ex VAT)
₪ 14.807
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | ₪ 12.656 | ₪ 379.67 |
150 - 270 | ₪ 11.579 | ₪ 347.36 |
300+ | ₪ 10.712 | ₪ 321.35 |
Technical documents
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1250 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
136 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.