N-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-523 onsemi FDY302NZ

RS Stock No.: 807-0729Brand: onsemiManufacturers Part No.: FDY302NZ
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

625 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.8 nC @ 4.5 V

Width

0.98mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Height

0.78mm

Product details

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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₪ 0.825

Each (In a Pack of 100) (ex VAT)

₪ 0.965

Each (In a Pack of 100) (inc VAT)

N-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-523 onsemi FDY302NZ
Select packaging type

₪ 0.825

Each (In a Pack of 100) (ex VAT)

₪ 0.965

Each (In a Pack of 100) (inc VAT)

N-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-523 onsemi FDY302NZ
Stock information temporarily unavailable.
Select packaging type

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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

625 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.8 nC @ 4.5 V

Width

0.98mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Height

0.78mm

Product details

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.