N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 onsemi BVSS138LT1G

RS Stock No.: 184-4196Brand: onsemiManufacturers Part No.: BVSS138LT1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.85V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.04mm

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Automotive Standard

AEC-Q101

Height

1.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Stock information temporarily unavailable.

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Stock information temporarily unavailable.

₪ 0.434

Each (On a Reel of 3000) (ex VAT)

₪ 0.508

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 onsemi BVSS138LT1G

₪ 0.434

Each (On a Reel of 3000) (ex VAT)

₪ 0.508

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 onsemi BVSS138LT1G
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
3000 - 6000₪ 0.434₪ 1,300.51
9000 - 12000₪ 0.406₪ 1,216.61
15000+₪ 0.35₪ 1,048.80

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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.85V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.04mm

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Automotive Standard

AEC-Q101

Height

1.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China