N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 onsemi BSS138LG

RS Stock No.: 545-2529Brand: onsemiManufacturers Part No.: BSS138LT1G
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

0.94mm

Product details

N-Channel Power MOSFET, 50V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

₪ 2.028

Each (In a Pack of 25) (ex VAT)

₪ 2.373

Each (In a Pack of 25) (inc VAT)

N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 onsemi BSS138LG
Select packaging type

₪ 2.028

Each (In a Pack of 25) (ex VAT)

₪ 2.373

Each (In a Pack of 25) (inc VAT)

N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 onsemi BSS138LG
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
25 - 100₪ 2.028₪ 50.69
125 - 475₪ 0.853₪ 21.33
500 - 1225₪ 0.839₪ 20.98
1250+₪ 0.615₪ 15.38

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

0.94mm

Product details

N-Channel Power MOSFET, 50V, ON Semiconductor

MOSFET Transistors, ON Semiconductor